• DocumentCode
    1708876
  • Title

    Resonant absorption of a short-pulse laser in a doped dielectric

  • Author

    Ang, L.K. ; Lau, Y.Y. ; Gilgenbach, R.M.

  • Author_Institution
    Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1999
  • Firstpage
    130
  • Abstract
    Summary form only given. A simple model is used to calculate the efficiency of energy absorption when a laser of short pulse length impinges on a dielectric slab that is doped with an impurity with a resonant line at the laser frequency. The impurity is assumed to have a finite linewidth. Dimensionless parameters are constructed that combine the dopant concentration, the dopant resonant linewidth, laser pulse length, separation between the laser frequency and the dopant transition frequency, and the width of the dielectric slab. This allows calculation with one set of normalized parameters be used to infer the results expected for other sets of parameters. It is found that the energy absorption efficiency is maximized for a certain degree of doping concentration (at a given pulse length), and also for a certain pulse length (at a given dopant concentration). Typically, tens of percent of the laser energy can be resonantly absorbed with only a modest amount of impurities.
  • Keywords
    dielectric materials; impurities; impurity absorption spectra; light absorption; spectral line breadth; dielectric slab width; dimensionless parameters; dopant concentration; dopant resonant linewidth; dopant transition frequency; doped dielectric; doping concentration; energy absorption; energy absorption efficiency; finite linewidth; impurity; laser frequency; laser pulse length; pulse length; resonant absorption; resonant line; resonantly absorbed laser energy; short-pulse laser; Absorption; Dielectrics; Frequency; Impurities; Laser modes; Laser transitions; Optical pulses; Resonance; Slabs; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1999. ICOPS '99. IEEE Conference Record - Abstracts. 1999 IEEE International Conference on
  • Conference_Location
    Monterey, CA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-5224-6
  • Type

    conf

  • DOI
    10.1109/PLASMA.1999.829354
  • Filename
    829354