A 67-110GHz CMOS to WR-10 waveguide transition using wirebonds and wideband microstrip launcher

Author

Jameson, Samuel ; Socher, Eran

Author_Institution

Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and implemented. First, a CPW on Duroid to W-band aluminum waveguide is realized with a bandwidth of 49 % (67-110 GHz), an average insertion loss of -0.35 dB and reflection loss below -10 dB throughout the entire band. Then, wire-bonding the CMOS G-S-G pads to the Duroid CPW introduces an average 0.2 dB loss in the W-band. A 100 GHz RF signal of a 90nm CMOS VCO was transmitted successfully using this transition with less than 2 dB loss (which includes a 2-cm Duroid CPW line) compared to on chip probing measurement results.

Keywords

CMOS analogue integrated circuits; coplanar waveguides; field effect MIMIC; lead bonding; microstrip transitions; millimetre wave oscillators; voltage-controlled oscillators; CMOS G-S-G pads; CMOS VCO; CMOS chip; Duroid CPW line; RF signal; W-band aluminum waveguide; WR-10 waveguide transition; frequency 67 GHz to 110 GHz; on chip probing measurement; size 2 cm; size 90 nm; two-step transition; wideband microstrip launcher; wire-bonding; CMOS integrated circuits; Coplanar waveguides; Educational institutions; Frequency measurement; Probes; Radio frequency; Semiconductor device measurement; CMOS; CPW; W-band; package; transition; waveguide; wire-bond;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848240

Filename

6848240