• DocumentCode
    170913
  • Title

    A 3-10 GHz 13 pJ/pulse dual BPSK/QPSK pulse modulator based on harmonic injection locking

  • Author

    El-Gabaly, Ahmed M. ; Saavedra, Carlos E.

  • Author_Institution
    Peraso Technol. Inc., Toronto, ON, Canada
  • fYear
    2014
  • fDate
    1-6 June 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present a new method to phase-modulate RF pulses through injection locking. The modulator can produce BPSK or QPSK modulated pulses over a frequency span of 3 to 10 GHz. The RF pulses are produced using a fast on/off switching technique to power up and power down a tunable ring oscillator. Experiments show that the modulator´s energy consumption ranges from 13 pJ/pulse to 18 pJ/pulse as the carrier frequency varies from 3 GHz to 10 GHz. The energy consumption figures are for 2 ns long pulses with amplitudes of 300 mV at 3 GHz and 200 mV at 10 GHz. The pulse repetition rate is 250 MHz. The chip was fabricated in 130 nm CMOS and the core circuit area is only 0.05 mm2.
  • Keywords
    CMOS integrated circuits; injection locked oscillators; microwave oscillators; pulse modulation; quadrature phase shift keying; BPSK modulated pulses; BPSK pulse modulator; QPSK modulated pulses; QPSK pulse modulator; RF pulses; fast on-off switching technique; frequency 250 MHz; frequency 3 GHz to 10 GHz; harmonic injection locking; size 130 nm; tunable ring oscillator; voltage 200 mV; voltage 300 mV; Binary phase shift keying; CMOS integrated circuits; Frequency control; Indium tin oxide; Inverters; Switches; BPSK; CMOS RFIC´s; Injection locking; QPSK; RF pulse modulation; impulse radio; ring oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2014 IEEE MTT-S International
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/MWSYM.2014.6848241
  • Filename
    6848241