W-Band CMOS on-chip energy harvester and rectenna

This paper presents the first fully on-chip integrated energy harvester and rectenna at the W-Band in 65nm CMOS technology. The designs are based on a 1-stage Dickson voltage multiplier. The rectenna consists of an on-chip integrated dipole antenna with a reflector underneath the substrate to enhance the directivity and realized gain. The energy harvester and rectenna achieve a power conversion efficiency of 10% and 2% respectively at 94GHz. The stand-alone harvester occupies only 0.0945mm² including pads, while the fully integrated rectenna occupies a minimal chip area of 0.48mm².