Title :
A 14b 80MS/s SAR ADC with 73.6dB SNDR in 65nm CMOS
Author :
Kapusta, R. ; Junhua Shen ; Decker, Stefan ; Hongxing Li ; Ibaragi, E.
Author_Institution :
Analog Devices, Wilmington, MA, USA
Abstract :
Successive-approximation ADCs (SARs) have excelled in two spaces: in very-high-SNR applications where the precision and stability of capacitors are leveraged along with the use of large signal swings and in high-speed, low-resolution applications in which the SAR´s low power and simplicity has enabled high levels of time-interleaving. In between, ADCs with greater than 10 effective bits and sample rates above 20MS/s are typically not based on the SAR architecture. The sequential nature of the SAR algorithm makes it difficult to achieve both high speed and high accuracy, as increasing the resolution requires each bit decision to be both faster and lower noise. This paper presents a SAR that overcomes some of the conventional speed limitations; it uses a 1.2V-only supply and achieves >70dB SNDR at 80MS/s, which extends the state of the art while maintaining comparable FoM.
Keywords :
CMOS integrated circuits; analogue-digital conversion; capacitors; circuit stability; integrated circuit noise; CMOS technology; FoM; SAR ADC; SNDR; capacitor; circuit noise; high-speed low-resolution application; noise figure 73.6 dB; signal swing; size 65 nm; successive-approximation ADC; very-high-SNR application; voltage 1.2 V; word length 14 bit; Accuracy; CMOS integrated circuits; Capacitors; Signal to noise ratio; Switches; Throughput;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487820