• DocumentCode
    1709164
  • Title

    A 14b 80MS/s SAR ADC with 73.6dB SNDR in 65nm CMOS

  • Author

    Kapusta, R. ; Junhua Shen ; Decker, Stefan ; Hongxing Li ; Ibaragi, E.

  • Author_Institution
    Analog Devices, Wilmington, MA, USA
  • fYear
    2013
  • Firstpage
    472
  • Lastpage
    473
  • Abstract
    Successive-approximation ADCs (SARs) have excelled in two spaces: in very-high-SNR applications where the precision and stability of capacitors are leveraged along with the use of large signal swings and in high-speed, low-resolution applications in which the SAR´s low power and simplicity has enabled high levels of time-interleaving. In between, ADCs with greater than 10 effective bits and sample rates above 20MS/s are typically not based on the SAR architecture. The sequential nature of the SAR algorithm makes it difficult to achieve both high speed and high accuracy, as increasing the resolution requires each bit decision to be both faster and lower noise. This paper presents a SAR that overcomes some of the conventional speed limitations; it uses a 1.2V-only supply and achieves >70dB SNDR at 80MS/s, which extends the state of the art while maintaining comparable FoM.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; capacitors; circuit stability; integrated circuit noise; CMOS technology; FoM; SAR ADC; SNDR; capacitor; circuit noise; high-speed low-resolution application; noise figure 73.6 dB; signal swing; size 65 nm; successive-approximation ADC; very-high-SNR application; voltage 1.2 V; word length 14 bit; Accuracy; CMOS integrated circuits; Capacitors; Signal to noise ratio; Switches; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4673-4515-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2013.6487820
  • Filename
    6487820