DocumentCode
170928
Title
Cryogenic performance of HEMT amplifiers at 340GHz and 670GHz
Author
Reck, Theodore J. ; Deal, William ; Chattopadhyay, Goutam
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2014
fDate
1-6 June 2014
Firstpage
1
Lastpage
3
Abstract
The cryogenic performance of HEMT amplifiers operating above 300 GHz is presented for the first time. InP HEMT amplifiers designed for room temperature operation are cooled to 25 K and their sensitivity is characterized using the Y-factor method. Minimum noise temperatures of 400 K and 550 K are achieved at 340 GHz and 670 GHz, respectively.
Keywords
III-V semiconductors; cryogenic electronics; high electron mobility transistors; indium compounds; submillimetre wave amplifiers; HEMT amplifiers; InP; Y-factor method; cryogenic performance; frequency 340 GHz; frequency 670 GHz; room temperature operation; temperature 25 K; Cryogenics; HEMTs; Mixers; Cryogenics; HEMT; Low noise amplifier; Terahertz;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/MWSYM.2014.6848250
Filename
6848250
Link To Document