Title :
A radio-frequency reconfigurable CMOS-GaN class-E Chireix power amplifier
Author :
van der Heijden, Mark P. ; Acar, Mustafa
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
A new load-insensitive class-E power amplifier mode is presented that that enables frequency reconfigurability by statically changing the switch duty-cycle without compromising its tuned efficiency performance. The technique is tested on a prototype CMOS-GaN class-E Chireix power amplifier designed for 1.8-2.2 GHz. The drain efficiency is more than 55% at 8dB back-off and more than 60% at 6dB back-off across the band by reconfiguring the duty-cycle at each frequency via the pulse-width controlled CMOS drivers.
Keywords :
CMOS integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; field effect MMIC; gallium compounds; wide band gap semiconductors; class-E Chireix power amplifier; frequency 1.8 GHz to 2.2 GHz; load insensitive power amplifier; pulse width controlled CMOS driver; radio frequency power amplifier; reconfigurable CMOS power amplifier; CMOS integrated circuits; HEMTs; Performance evaluation; Pulse width modulation; Switching circuits; CMOS; Chireix combiner; GaN HEMT; base station; class E; efficiency; outphasing; power amplifier;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848251
