Title :
Microwave passive power limiters with MESFETs
Author :
Drozdovski, Nikolai V.
Author_Institution :
Special Res. Bur., MPEI, Moscow, Russia
Abstract :
This paper describes design, fabrication and test of various microwave passive power limiters based on GaAs MESFETs. Transistors are used as devices under DC voltage control as well as self-controlled devices. Different limiters and their characteristics are compared
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; hybrid integrated circuits; integrated circuit design; microwave limiters; DC voltage control; GaAs; MESFETs; MMIC; amplifier protection; hybrid ICs; microwave passive power limiters; self-controlled devices; Detectors; Gallium arsenide; Impedance; MESFETs; Microwave devices; Radio frequency; Schottky barriers; Schottky diodes; Solid state circuits; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International
Conference_Location :
Natal
Print_ISBN :
0-7803-4165-1
DOI :
10.1109/SBMOMO.1997.648785
