Title :
A 71–86GHz multi-tanh up-conversion mixer achieving +1dBm OP1dB in 0.13 μm SiGe technology
Author :
Levinger, R. ; Sheinman, B. ; Katz, O. ; Ben-Yishay, R. ; Carmon, R. ; Mazor, N. ; Bruetbrat, Avi ; Elad, Danny ; Socher, Eran
Author_Institution :
Haifa Labs., IBM, Haifa, Israel
Abstract :
A high output 1dB compression up-conversion mixer for the entire E band frequency range, 71-76 GHz and 81-86 GHz, is designed and fabricated in IBM 0.13 μm SiGe technology. The mixer is comprised of a double balanced Gilbert cell and a multi-tanh three transistor hybrid transconductance stage, used to enhance the mixer linearity. The conversion gain and output 1dB compression are 3.9dB and +1dBm, respectively at 71GHz and vary within 3dB and 4dB respectively over the entire 15GHz range. LO leakage is less then -30dB and noise figure is under 9dB. The circuit consumes 80mW from a 2.7V supply.
Keywords :
Ge-Si alloys; integrated circuit design; integrated circuit manufacture; integrated circuit technology; millimetre wave integrated circuits; millimetre wave mixers; E band; Gilbert cell; IBM; SiGe; frequency 15 GHz; frequency 71 GHz to 86 GHz; multi-tanh three transistor hybrid transconductance stage; multi-tanh up-conversion mixer; noise figure; power 80 mW; size 0.13 mum; voltage 2.7 V; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Mixers; Silicon; Silicon germanium; Switches; Double Balanced Up-Conversion Mixer; E band; Linearity; OP1dB; SiGe; multi-tanh;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848282
