A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance

Author

Smith, P.M. ; Ashman, M. ; Dong Xu ; Xiaoping Yang ; Creamer, Carl ; Chao, P.C. ; Kanin Chu ; Duh, K.H. ; Koh, Cheng-Kok ; Schellenberg, James

Author_Institution

BAE Syst. Microelectron. Center, Nashua, NH, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

A 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance is reported. The 3-stage LNA exhibits on-wafer noise figure (NF) as low as 1.6dB with 25dB gain at 80GHz, and also shows unprecedented wideband performance, with 20dB minimum gain across the 30-100GHz band and NF <;2.5dB over the 43-90GHz band. An LNA packaged in a WR-12 module has flange NF of 2.0dB over 74-80GHz and NF <;2.6dB with 27 ± 2dB gain across the full 60-90GHz waveguide band.

Keywords

HEMT integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; MHEMT millimeter wave LNA; MMIC LNA; frequency 30 GHz to 100 GHz; gain 25 dB; loss 1.6 dB; low noise amplifier; size 50 nm; wideband gain performance; wideband noise performance; Epitaxial growth; Frequency measurement; Noise; Noise measurement; Voltage measurement; mHEMTs; HEMT; MMICs; low noise amplifier (LNA); millimeter wave circuits; noise figure (NF);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848288

Filename

6848288