Title :
A 190-GHz amplifier with gain-boosting technique in 65-nm CMOS
Author :
Di-Sheng Siao ; Jui-Chih Kao ; Yuan-Hung Hsiao ; Yao-Wen Hsu ; Yu-Ming Teng ; Guo-Wei Huang ; Kun-You Lin ; Huei Wang
Author_Institution :
Dept. of Electr. Eng. & Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper demonstrates a 190-GHz, 3 stages CMOS amplifier based on cascode topology using 65-nm standard RF CMOS 1P9M technology. To design a high gain amplifier at G-band using CMOS process, the gain-boosting technique is adopted to enhance the maximum stable gain (MSG) performance in this work. Based on the experimental results, the peak gain is 16.3 dB at 190 GHz, with 3-dB bandwidth from 188 to 192 GHz, and the core area of chip size is 0.29 mm2.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave amplifiers; CMOS amplifier; G-band amplifier; cascode topology; frequency 188 GHz to 192 GHz; gain boosting technique; high gain amplifier; maximum stable gain; size 65 nm; standard RF CMOS 1P9M technology; CMOS integrated circuits; CMOS technology; Chemistry; Indexes; CMOS amplifiers; G-band amplifier; millimeter-wave amplifier;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848290
