Title :
A digital tunable single and differential-ended 900 MHz front end RF amplifier using CMOS technology
Author :
Abou-Allam, E. ; Manku, T. ; El-Masry, E.I.
Author_Institution :
Dept. of Electr. Eng., Tech. Univ. Nova Scotia, Halifax, NS, Canada
Abstract :
Presents a single and differential ended 900 MHz RF amplifier based on CMOS technology, The RF amplifiers are designed to take into account the ESD and input pad parasitics. The integrated inductors are all below a value of 10 nH. This is done to reduce the physical size of the inductors and to increase the self-resonating frequency of the inductors
Keywords :
CMOS digital integrated circuits; UHF amplifiers; VLSI; electrostatic discharge; inductors; radio equipment; 900 MHz; CMOS technology; ESD; digital tunable single differential-ended 900 MHz front end RF amplifier; input pad parasitics; integrated inductors; physical size; self-resonating frequency; Aluminum; CMOS technology; Capacitance; Circuits; Inductors; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Resonant frequency;
Conference_Titel :
Electrical and Computer Engineering, 1995. Canadian Conference on
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-2766-7
DOI :
10.1109/CCECE.1995.528112
