DocumentCode :
171028
Title :
VSWR-protected 90 W L-band AlGaN/GaN power amplifier
Author :
van Heijningen, M. ; van der Bent, Gijs ; van der Houwen, E. ; Chowdhary, Amitabh ; van Vliet, Frank E.
Author_Institution :
TNO, The Hague, Netherlands
fYear :
2014
fDate :
1-6 June 2014
Firstpage :
1
Lastpage :
3
Abstract :
Solid-state power amplifiers need protection against reflected power at the output caused by load mismatch. The standard method for protection is to include a ferrite-based isolator at the output. The isolator will redirect all reflected power to a dissipating load resistor and will ensure that the output of the amplifier always sees a 50 Ω load. Disadvantage of such isolator is the large size, weight and limited possibility for integration and miniaturization. In this work a protection circuit is presented that can replace the isolator and still offer full protection against any power reflection at the output of the amplifier. This protection circuit is based on measurement of the reflected power and a feedback loop to adjust the gain of a driver-stage, also known as fold-back protection. The driver-stage and output stage are implemented in AlGaN/GaN MMIC and power-bar technology. This protection circuit has been demonstrated on a 2-stage, 90 W L-band power amplifier, intended to be used in satellite payloads for various space applications.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; ferrite isolators; gallium compounds; resistors; wide band gap semiconductors; AlGaN-GaN; MMIC; VSWR-protected L-band power amplifier; dissipating load resistor; driver-stage; feedback loop; ferrite-based isolator; fold-back protection; load mismatch; power 90 W; power reflection; power-bar technology; protection circuit; reflected power; resistance 50 ohm; satellite payloads; solid-state power amplifiers; space applications; Abstracts; Couplers; Europe; Gallium nitride; Logic gates; Temperature measurement; Transistors; High power amplifiers; gallium nitride; protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/MWSYM.2014.6848302
Filename :
6848302
Link To Document :
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