Title :
Spectral absorption analysis in AlGaAs/GaAs photodetectors
Author :
Castro, Francisco ; Nabet, Bahram
Author_Institution :
Motorola Labs., Schaumburg, IL, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
Spectral photoresponsivity measurements on AlGaAs/GaAs detectors with lateral heterodimensional metal contacts show a peak near the absorption edge of GaAs under low incident power and high biasing conditions. To model this behavior we expand on the photoreflection analysis of AlGaAs/GaAs heterostructures by spatially modulating the optical properties of the GaAs absorption layer as a result of the built-in electric field and the quantum confinement near the interface. Simulations which combine spatial variations in the absorption properties with an existing model of charge collection for metal-semiconductor-metal photodetectors have been able to reproduce the spectral results observed during experimentation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light absorption; metal-semiconductor-metal structures; permittivity; photodetectors; semiconductor device models; AlGaAs-GaAs; AlGaAs/GaAs heterostructures; AlGaAs/GaAs photodetectors; GaAs absorption layer; MSM photodetector; built-in electric field; charge collection; dielectric permittivity; high biasing conditions; lateral heterodimensional metal contacts; low incident power conditions; metal-semiconductor-metal photodetectors; model; optical absorption properties; optical properties; photoreflection analysis; quantum confinement; spatial variations; spectral photoresponsivity measurements; Absorption; Dielectrics; Gallium arsenide; Nonuniform electric fields; Optical modulation; Photoconductivity; Photodetectors; Quantization; Spectral analysis; Testing;
Conference_Titel :
Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7065-1
DOI :
10.1109/SBMOMO.2001.1008815
