Dielectric characteristics of ultra-pure SP adulterated with PANI

Restraining the impurity ions´ conductance under high temperature and preventing movement and accumulating of the ions under high field are concerned much in power silicon devices´ surface passivation. More attention should be paid to the high temperature conductance characteristic of silicone resin modified polyester (SP), which is used in power silicon device´s surface protection. The resistivity-temperature characteristic of PANI/SP composite, showing a positive resistivity-temperature characteristic or ´Platform effect´ in some temperature region, differs significantly from that of pure SP. The temperature threshold from electron conductance to ion conductance increases from 343 K to 383 K, which has different conductance mechanism. Permitivity and dielectric loss (tanδ) have little difference between SP and PANI-SP composite with certain ratio. Fourier transform infrared spectroscopy (FTlR) shows that the same solidification procedure for PANI/SP composite can be used as that for SP.