Title :
A 53 to 84 GHz CMOS power amplifier with 10.8-dBm output power and 31 GHz 3-dB bandwidth
Author :
Po-Han Chiang ; Wei-Heng Lin ; Tzu-Yuan Huang ; Huei Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 53-to-84 GHz wideband power amplifier (PA) is implemented in 65-nm GP CMOS technology. This PA exhibits a measured small signal gain of 29.1 ± 1.5 dB from 53 to 84 GHz and a Psat of 10.8 dBm, P1dB of 7.2 dBm, power added efficiency (PAE) of 9.7% at 80 GHz at drain voltage of 1.2 V. The DC consumption is 123 mW.
Keywords :
CMOS analogue integrated circuits; millimetre wave integrated circuits; millimetre wave power amplifiers; wideband amplifiers; GP CMOS technology; PA; efficiency 9.7 percent; frequency 53 GHz to 84 GHz; power 123 mW; size 65 nm; voltage 1.2 V; wideband power amplifier; BiCMOS integrated circuits; Broadband communication; CMOS integrated circuits; CMOS process; Capacitors; US Department of Defense; CMOS power amplifier; E-band; V-band; broadband;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848312
