Title :
Highly efficient 200-GHz fixed-frequency fundamental source in transferred-substrate InP DHBT technology
Author :
Hossain, M. ; Kraemer, T. ; Krueger, O. ; Krozer, V. ; Heinrich, Wolfgang
Author_Institution :
Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst. (FBH), Berlin, Germany
Abstract :
A 197-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate InP-DHBT process. It delivers 0 dBm output power, with a phase noise of -88 dBc/Hz at 1.6 MHz offset frequency. DC consumption is only 22 mW from a 1.4 volts power supply, which corresponds to the highest overall DC-to-RF efficiency of a millimeter-wave frequency source reported to date.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave oscillators; DC consumption; DC-to-RF efficiency; InP; fixed-frequency fundamental oscillator; fixed-frequency fundamental source; frequency 197 GHz; frequency 200 GHz; millimeter-wave frequency source; phase noise; transferred-substrate DHBT technology; voltage 1.4 V; Abstracts; CMOS integrated circuits; CMOS technology; DH-HEMTs; Indexes; Process control; Silicon germanium; InP double heterojunction bipolar transistor (DHBT); benzocyclobutene (BCB); millimeter wave (mm-wave) source; monolithic microwave integrated circuit (MMIC) oscillator; sub-Terahertz; transferred-substrate process;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848320
