Title :
Q- and E-band amplifier MMICs for satellite communication
Author :
Schwantuschke, Dirk ; Aja, B. ; Seelmann-Eggebert, Matthias ; Quay, Ruediger ; Leuther, A. ; Bruckner, P. ; Schlechtweg, Michael ; Mikulla, Michael ; Kallfass, I. ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys. IAF, Freiburg, Germany
Abstract :
This work discusses MMICs for the realization of spaceborn multi-Gigabit satellite communication systems. A broadband low-noise amplifier, based on a 50 nm GaAs mHEMT technology, has been developed for Q-band low-noise receivers. The amplifier shows a small-signal gain of 27.5 dB with a gain flatness of ± 1.2 dB and a noise figure below 2 dB over the entire targeted frequency range between 30 and 50 GHz. For the next generation of E-band transmitter modules, a GaN-based high-power amplifier with a small-signal gain above 15 dB between 70-75 GHz and a saturated output power exceeding 28 dBm at 74 GHz has been developed.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; low noise amplifiers; millimetre wave amplifiers; satellite communication; wide band gap semiconductors; wideband amplifiers; GaAs; GaN; MMIC amplifier; broadband low-noise amplifier; frequency 30 GHz to 50 GHz; frequency 70 GHz to 75 GHz; gain 27.5 dB; mHEMT technology; satellite communication; size 50 nm; Indexes; MMICs; Measurement by laser beam; Molecular beam epitaxial growth; Noise measurement; Optical variables measurement; mHEMTs; Low-noise amplifier (LNA); aluminum gallium nitride; gallium nitride; high power amplifier; metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuits (MMICs);
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848322
