Title :
A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
Author :
Weber, R. ; Schwantuschke, Dirk ; Bruckner, P. ; Quay, Ruediger ; van Raay, Friedbert ; Ambacher, Oliver
Author_Institution :
Fraunhofer-Inst. of Appl. Solid State Phys. (IAF), Freiburg, Germany
Abstract :
In this paper, we report state-of-the-art high frequency performance of a W-band voltage-controlled oscillator (VCO) MMIC realized in a 0.1 μm AlGaN/GaN HEMT technology. The oscillation frequency of the VCO can be tuned between 85.6 and 92.7 GHz, which is a relative tuning bandwidth of 8%. The achieved maximum output power is as high as 10.6 dBm. The phase noise of the VCO varies from -80.2 to -90.2 dBc/Hz at 1 MHz offset from the carrier over the tuning voltage range.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; field effect MIMIC; field effect MMIC; gallium compounds; millimetre wave oscillators; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; HEMT voltage-controlled oscillator MMIC; W-band VCO; frequency 85.6 GHz to 92.7 GHz; oscillation frequency; phase noise; size 0.1 mum; Gallium nitride; Indexes; MMICs; Voltage measurement; Voltage-controlled oscillators; mHEMTs; Gallium Nitride (GaN); W-band (75 – 110 GHz); grounded coplanar waveguide (GCPW); high electron mobility transistor (HEMT); monolithically microwave integrated circuit (MMIC); voltage-controlled oscillator (VCO);
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848326
