Title :
12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
Author :
Piotrowicz, S. ; Jardel, O. ; Chartier, E. ; Aubry, Raphael ; Baczkowski, Leny ; Casbon, M. ; Dua, Christian ; Escotte, Laurent ; Gamarra, Piero ; Jacquet, J.C. ; Michel, N. ; Nsele, S.D. ; Oualli, M. ; Patard, O. ; Potier, C. ; Di-Forte Poisson, M.A. ; D
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We report on the development of a 0.15μm gate length InAlN/GaN HEMT on SiC substrate technology for applications in K and Ka-Bands. Measurements results of pulsed I-V, S-parameters, load-pull and RF noise figure are presented. Devices exhibit a maximum DC transconductance of 350mS/mm and Idss of 0.95A/mm. Cut-off frequencies FT and Fmag of 45GHz and 100 GHz are reached. Load-pull power measurements at 18GHz allowed us to achieve an output power density of 12W/mm in pulsed mode at Vds=50V. At 30 GHz, 2.5W/mm was measured at Vds=20V. RF noise measurements showed a minimum noise figure of 1.25dB at 20 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; silicon compounds; wide band gap semiconductors; InAlN-GaN; K-bands; Ka-bands; RF noise figure; RF noise measurements; S-parameters; SiC; frequency 100 GHz; frequency 20 GHz; frequency 30 GHz; frequency 45 GHz; gate length HEMTs; load-pull power measurements; pulsed I-V; size 0.15 mum; voltage 20 V; voltage 50 V; Current measurement; Noise; Noise figure; Silicon carbide; Substrates; Thickness measurement; InAlN/GaN HEMT; K-Band; Ka-Band; RF noise; load-pull;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848347
