• DocumentCode
    1711454
  • Title

    Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

  • Author

    Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim S. ; Kagadei, Valery A.

  • Author_Institution
    Rzhanov Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
  • fYear
    2010
  • Firstpage
    584
  • Lastpage
    588
  • Abstract
    Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).
  • Keywords
    Schottky barriers; Schottky gate field effect transistors; doping profiles; ion implantation; Schottky barrier; doping profile; field effect transistor; ion-implanted MESFET; Doping profiles; Gallium arsenide; MESFETs; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on
  • Conference_Location
    Listvyanka
  • Print_ISBN
    978-1-4244-7625-1
  • Type

    conf

  • DOI
    10.1109/SIBIRCON.2010.5555371
  • Filename
    5555371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1711454