Title :
Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier
Author :
Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim S. ; Kagadei, Valery A.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
Abstract :
Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).
Keywords :
Schottky barriers; Schottky gate field effect transistors; doping profiles; ion implantation; Schottky barrier; doping profile; field effect transistor; ion-implanted MESFET; Doping profiles; Gallium arsenide; MESFETs; Substrates; Threshold voltage;
Conference_Titel :
Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on
Conference_Location :
Listvyanka
Print_ISBN :
978-1-4244-7625-1
DOI :
10.1109/SIBIRCON.2010.5555371
