Title :
Physical properties of electrooptical GaSe:Al
Author :
Ku, S.A. ; Luo, C.W. ; Chu, W.C. ; Andreev, Yu.M. ; Atuchin, V.V. ; Lanskii, G.V. ; Morozov, A.N. ; Shaiduko, A.V. ; Zuev, V.V.
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Physical properties of Al-doped GaSe or GaSe:Al(0.01, 0.02, 0.05, 0.1, 0.5, 1, 2 wt%) crystals in charge composition were studied in comparison with pure GaSe to reveal the potentials for sub- and microwave elec-trooptical application. Aluminium was not detected in GaSe:Al by X-ray chemical analysis. It was found that resistivity of GaSe:Al drastically increases with Al doping up to 105-107 in comparison with (1-3)·102 in pure GaSe and 103 Om-cm in GaSe:S(2 wt%). No significant changes in optical properties to that in GaSe (α≤0.1-0.2 cm-1) were found at 0.01-0.02 wt% Al-doping but 2-fold to 3-fold increase in hardness at 0.5 wt% Al-doping. GaSe physical properties modified by Al-doping make it very attractive for mid-IR and sub-microwave electrooptic applications.
Keywords :
III-VI semiconductors; X-ray chemical analysis; aluminium; electrical resistivity; electro-optical effects; gallium compounds; hardness; semiconductor doping; GaSe:Al; X-ray chemical analysis; aluminium; charge composition; doping; hardness; optical properties; resistivity; sub-microwave electrooptical application; Crystals; Doping; Electrooptical waveguides; Frequency conversion; Gases; Nonlinear optics;
Conference_Titel :
Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on
Conference_Location :
Listvyanka
Print_ISBN :
978-1-4244-7625-1
DOI :
10.1109/SIBIRCON.2010.5555372
