Title :
Doped GaSe crystals for optical frequency conversion in infrared and terahertz spectral ranges
Author :
Atuchin, V.V. ; Andreev, Yu.M. ; Luo, Chih Wei ; Gavrilova, T.A. ; Ku, S.A. ; Sarkisov, S.Yu.
Author_Institution :
Lab. of Opt. Mater. & Struct., SB RAS, Novosibirsk, Russia
Abstract :
GaSe1-xTx (T = S, Te) single crystals have been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with SEM and TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of S-content.
Keywords :
III-VI semiconductors; crystal growth from melt; crystal structure; gallium compounds; infrared spectra; optical constants; optical frequency conversion; scanning electron microscopy; terahertz spectroscopy; terahertz wave spectra; transmission electron microscopy; Bridgman-Stockbarger technique; GaSe; S-content; SEM; TEM; infrared spectral range; optical constant; optical frequency conversion; scanning electron microscopy; structural quality; terahertz spectral range; terahertz time-domain spectroscopy; transmission electron microscopy; Crystals; Frequency conversion; Gases; Nonlinear optics; Optical harmonic generation; Optical refraction; Optical variables control;
Conference_Titel :
Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on
Conference_Location :
Listvyanka
Print_ISBN :
978-1-4244-7625-1
DOI :
10.1109/SIBIRCON.2010.5555376
