Title :
A 72% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifier for sub-1GHz application
Author :
Ronghui Zhang ; Acar, Mustafa ; Theeuwen, Steven ; van der Heijden, Mark P. ; Leenaerts, Domine M. W.
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14μm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (η) >80.5% and a power-added efficiency >72.6% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.
Keywords :
CMOS integrated circuits; MOSFET; UHF integrated circuits; UHF power amplifiers; driver circuits; silicon; CMOS driver; CMOS-LDMOS switch mode power amplifier; LDMOS transistor; SMPA; drain efficiency; frequency 450 MHz to 1000 MHz; load-pull measurement; power 10 W; power added efficiency; size 0.14 mum; voltage 5.0 V; CMOS integrated circuits; CMOS technology; Gallium; MOS devices; Switches; Switching circuits; Transistors; Broadband; CMOS; LDMOS; extended-drain MOS; high voltage; power amplifiers; power driver;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848376
