Title :
GIDL-induced charge injection for characterization of plasma edge damage in CMOS devices
Author :
Brozek, T. ; Sridharan, A. ; Werking, J. ; Anderson, S.R. ; Chan, Y.D. ; Viswanathan, C.R.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
The oxide thickening at the gate edge during poly gate reoxidation is very sensitive to plasma damage resulting from the poly-Si gate etch. The gate oxide thickening over the drain-gate overlap region can be used as a measure of the plasma edge damage. This paper presents a new method-GIDL-induced localized charge injection-to investigate plasma edge damage in CMOS devices. The sensitivity of the method and correlation with device performance is demonstrated in a study of technological splits with different levels of plasma damage. The method does not require any special test structures other than the regular transistor
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit reliability; integrated circuit testing; sputter etching; CMOS devices; GIDL-induced charge injection; Si; drain-gate overlap region; gate induced drain leakage; oxide thickening; plasma edge damage characterisation; poly gate reoxidation; poly-Si gate etch; polysilicon etching; Etching; MOSFETs; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Testing; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589348
