• DocumentCode
    1711973
  • Title

    On the oxide thickness extraction in deep-submicron technologies

  • Author

    Vincent, E. ; Ghibaudo, G. ; Morin, G. ; Papadas, C.

  • Author_Institution
    SGS-Thomson Microelectron., Crolles, France
  • fYear
    1997
  • Firstpage
    105
  • Lastpage
    110
  • Abstract
    Thickness measurement of ultrathin oxides is more and more difficult due to the oxide thickness scale down following the supply voltage decrease in deep-submicron technologies. This paper discusses the drawbacks of the already existing extraction methods and proposes an original approach which has various advantages. This extraction procedure, based on the plot 1/C vs 1/(VG-VFB) obtained by classical C-V measurements, can be easily implemented and provides more accurate oxide thickness results
  • Keywords
    MOS capacitors; insulating thin films; silicon compounds; thickness measurement; SiO2; capacitance-voltage characteristics; deep-submicron technology; parameter extraction; thickness measurement; ultrathin oxide; Atomic force microscopy; Atomic layer deposition; Capacitance measurement; Capacitance-voltage characteristics; Electric variables measurement; Optical refraction; Optical sensors; Permittivity measurement; Thickness measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-3243-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.1997.589349
  • Filename
    589349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1711973