Title :
Improved method for the extraction of oxide charge density and centroid from the current-voltage characteristic shifts in a MOS structure after uniform gate stress
Author :
Kies, R. ; Ghibaudo, G. ; Pananakakis, G. ; Papadas, C.
Author_Institution :
CNRS, Grenoble, France
Abstract :
A new method for the extraction of the oxide charge density and distribution centroid based on an improved DiMaria approach including the tunnel transparency modification due to the charge build up has been developed. The comparison with the conventional DiMaria procedure confirms the physical consistency of the new approach and enables a 20-30% improvement in the oxide charge density assessment for dielectrics as thin as 5-9 nm
Keywords :
MIS devices; MIS structures; DiMaria method; MOS structure; charge distribution centroid; current-voltage characteristics; dielectric thin film; gate stress; oxide charge density; tunnel transparency; Cathodes; Current-voltage characteristics; Dielectrics; Microelectronics; Read only memory; Silicon; Stress; Tunneling; Ultra large scale integration; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589350
