Title :
Out-of-plane and inline RF switches based on Ge2Sb2Te5 phase-change material
Author :
Crunteanu, Aurelian ; Mennai, A. ; Guines, Cyril ; Passerieux, Damien ; Blondy, Pierre
Author_Institution :
XLIM Res. Inst., Univ. of Limoges, Limoges, France
Abstract :
We present the fabrication and characterization of novel RF switches based on Ge2Sb2Te5 (GST) phase change material. Such ohmic devices show non-volatile switching with resistivity changes up to 105 as the material is transforming between the amorphous and the crystalline state by either applying a voltage pulse or direct heating. We investigated the RF properties and power handling of such devices in two configurations: out-of-plane (GST material between two electrodes) and inline switches. For a directly heated 10-μm length inline switch we measured an on-state resistance of 7 Ω, and an off-state capacitance and resistance of 13.7 fF and 6.47 MΩ, respectively, resulting in a cut-off frequency of ~1.6 THz.
Keywords :
antimony compounds; chalcogenide glasses; germanium compounds; microwave switches; phase change materials; tellurium compounds; GST material; Ge2Sb2Te5; RF properties; amorphous state; capacitance 13.7 fF; crystalline state; direct heating; inline RF switches; nonvolatile switching; off-state capacitance; off-state resistance; ohmic devices; on-state resistance; out-of-plane RF switches; phase-change material; power handling; resistance 6.47 Mohm; resistance 7 ohm; voltage pulse; Educational institutions; Heating; Optical reflection; Optical switches; Q measurement; Radio frequency; Ge2Sb2Te5; RF switches; high linearity; phase-change materials;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848417
