A Ku-band 20 W GaN-MMIC amplifier with built-in linearizer

Author

Kanaya, Koh ; Sato, Kiminori ; Koyanagi, Mitsumasa ; Koyama, H. ; Tsujioka, Kosaku ; Ohta, Atsushi ; Inoue, Akira ; Hirano, Yoshikuni

Author_Institution

High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

This report describes a Ku-band amplifier GaN MMIC. The amplifier MMIC delivers a measured saturated power of 20 W and gain of 20 dB under CW operation. To enhance the linearity of the two stage amplifier composed of the MMIC and GaN Internally Matched FET, a diode linearizer has also been built into the MMIC. The linearizer offers 5dB better linear output power, defined the output power at IM3 of -25 dBc, compared with that of MMIC without the linearizer. To our knowledge, this is the first report to present GaN-based high power amplifier MMIC with a built-in linearizer which can enhance the linearity of a PA system.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; gallium compounds; linearisation techniques; wide band gap semiconductors; GaN; Ku-band amplifier; MMIC amplifier; builtin linearizer; continuous wave operation; gain 20 dB; internally matched FET; power 20 W; two stage amplifier; Aluminum gallium nitride; Ice; Lead; Linearity; MMICs; Microwave amplifiers; Power amplifiers; GaN; IM3; MMIC; amplifier; linearizer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848427

Filename

6848427