Title :
Advanced GaAs power amplifier architecture linearized with a post-distortion method
Author :
Bensmida, S. ; Morris, K.A. ; Clifton, J.C. ; Lawrenson, A.
Author_Institution :
Centre for Commun. Res., Univ. of Bristol, Bristol, UK
Abstract :
Linearizing power amplifiers (PA) using digital pre-distortion (DPD) results in the use of a pre-distorted driving input signal that exhibits higher peak-to-average power ratio (PAPR). This results in a decrease in the PA efficiency which is dependent on the level of output power back-off required. This work proposes a new linearization architecture based on a new “post-distortion” method for power amplifier (PA) nonlinearity compensation. The proposed architecture allows for PA linearization with optimal input signal drive level to avoid efficiency degradation. A pseudomorphic high electron-mobility transistor (pHEMT) dual input PA architecture is also introduced and shown to be suitable for the proposed linearization approach. In comparison to classic pre-distortion techniques, the proposed post-distortion improves the output power by 2 dB and the drain efficiency by 9% in the presence of a 20MHz LTE up-link signal.
Keywords :
III-V semiconductors; distortion; gallium arsenide; high electron mobility transistors; linearisation techniques; power amplifiers; DPD; GaAs; LTE up-link signal; PA efficiency; PA linearization; PAPR; digital pre-distortion; dual input PA architecture; efficiency degradation; frequency 20 MHz; optimal input signal; pHEMT; peak-to-average power ratio; post-distortion method; power amplifier architecture; power amplifier nonlinearity compensation; pseudomorphic high electron-mobility transistor; LTE; Pre-distortion; post-distortion; power amplifier; stacked architecture;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848428