Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics

Author

Santarelli, Alberto ; Niessen, Daniel ; Cignani, Rafael ; Gibiino, Gian Piero ; Traverso, Pier Andrea ; Florian, Corrado ; Schreurs, Dominique ; Filicori, Fabio

Author_Institution

DEI Guglielmo Marconi, Univ. of Bologna, Bologna, Italy

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

3

Abstract

A double-pulse technique for the I/V characterization of GaN-based transistors is adopted for the nonlinear modeling of a 0.25 μm AlGaN/GaN on SiC FET. Experimental validation is provided by means of large-signal PA performance prediction both at low-frequency, in order to outline the role played by the resistive drain current source, and at microwaves. Improved prediction accuracy is demonstrated with respect to the use of standard single-pulse I/V characteristics.

Keywords

III-V semiconductors; aluminium compounds; electron traps; field effect transistors; gallium compounds; semiconductor device models; silicon compounds; wide band gap semiconductors; AlGaN-GaN; FET; SiC; charge trapping nonlinear dynamics; field effect transistors; large-signal transistor characterization; nonlinear modeling; resistive drain current source; size 0.25 mum; Atmospheric measurements; Field effect transistors; Frequency measurement; Heating; Logic gates; Particle measurements; Silicon; Field effect transistors; Gallium nitride; Pulse measurements; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848431

Filename

6848431