InP DHBT wideband amplifiers with up to 235 GHz bandwidth

Author

Eriksson, Klas ; Darwazeh, Izzat ; Zirath, Herbert

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology. The amplifiers are designed using cascode cells, in a distributed amplifier topology, with simple on-chip resistive bias circuitry. A single stage design achieves 7.5 dB gain and 192 GHz bandwidth and a 2-cascaded distributed amplifier achieves gain in excess of 16 dB and with bandwidth exceeding 235 GHz, thus being the widest band amplifiers reported to date.

Keywords

III-V semiconductors; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 2-cascaded distributed amplifier; InP; bandwidth 192 GHz; cascode cells; distributed amplifier topology; gain 7.5 dB; indium phosphide DHBT wideband amplifiers; indium phosphide double-heterojunction bipolar transistor technology; on-chip resistive bias circuitry; single-stage design; wideband amplifier MMIC; Gain; Gain measurement; Heterojunction bipolar transistors; Indium phosphide; Integrated optics; Optical amplifiers; Stimulated emission; CSSDA; DHBT; InP; Wideband amplifiers; distributed amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848436

Filename

6848436