• DocumentCode
    171335
  • Title

    Millimeter wave hexagonal nano-ferrite circulator on silicon CMOS substrate

  • Author

    Liu Chao ; Oukacha, Hassan ; Enjin Fu ; Koomson, Valencia Joyner ; Afsar, Mohammed N.

  • Author_Institution
    Dept. of Electr. Eng., Tufts Univ., Medford, MA, USA
  • fYear
    2014
  • fDate
    1-6 June 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Hexagonal ferrites such as BaFe12O19 have very strong uniaxial anisotropic magnetic field and remanent magnetism. By employing these properties, magnetic devices can work in the tens of GHz frequency range without strong external magnetic field. The micro- and nano-sized hexagonal ferrite can be conveniently utilized to fabricate magnetic components integrated in CMOS integrated circuits. A circulator working at 60 GHz is designed and integrated into the commercial CMOS process.
  • Keywords
    CMOS integrated circuits; barium compounds; elemental semiconductors; ferrite circulators; field effect MIMIC; iron compounds; magnetic anisotropy; millimetre wave circulators; nanoelectronics; remanence; silicon; BaFe12O19; CMOS integrated circuits; Si; frequency 60 GHz; magnetic components; magnetic devices; microsized hexagonal ferrite; millimeter wave hexagonal nano-ferrite circulator; remanent magnetism; silicon CMOS substrate; uniaxial anisotropic magnetic field; Aluminum; CMOS integrated circuits; Circulators; Frequency modulation; Performance evaluation; Substrates; CMOS; Circulator; front end; hexagonal ferrite; post processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2014 IEEE MTT-S International
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/MWSYM.2014.6848467
  • Filename
    6848467