• DocumentCode
    171358
  • Title

    An ultra-low loss millimeter-wave solid state switch technology based on the metal - insulator - transition of vanadium dioxide

  • Author

    Hillman, Christopher ; Stupar, P.A. ; Hacker, J.B. ; Griffith, Zach ; Field, Mark ; Rodwell, M.

  • Author_Institution
    Teledyne Sci. Co., Thousand Oaks, CA, USA
  • fYear
    2014
  • fDate
    1-6 June 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF/ZON, is greater than 500:1 at 50GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology´s utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology´s high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.
  • Keywords
    S-parameters; field programmable gate arrays; millimetre wave devices; phase shifters; switches; vanadium compounds; VO2; frequency 110 GHz; frequency 40 THz; frequency 50 GHz; loss 0.2 dB; word length 2 bit; Epitaxial growth; Frequency measurement; Insulators; MMICs; MOSFET; Radio frequency; Switches; Low Loss RF Switch; Phase Change Switch; RF-FPGA; VO2; Vanadium Dioxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2014 IEEE MTT-S International
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/MWSYM.2014.6848479
  • Filename
    6848479