DocumentCode :
171364
Title :
A concurrent dual-band 1.9–2.6-GHz Doherty power amplifier with Intermodulation impedance tuning
Author :
Xiaofan Chen ; Wenhua Chen ; Gongzhe Su ; Ghannouchi, Fadhel M. ; Zhenghe Feng
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear :
2014
fDate :
1-6 June 2014
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, a novel matching structure is introduced to implement accurate impedance matching at intermodulation (IM) frequencies in concurrent dual-band power amplifiers (PAs). Additionally, a concurrent dual-band Doherty power amplifiers (DPAs) architecture featuring Intermodulation impedance tuning (IM tuning) is introduced in this paper. Based on the proposed matching structure and DPA architecture, a concurrent dual-band 1.9-2.6 GHz DPA is designed and fabricated using two 13-Watts GaN HEMTs. After linearization, the proposed DPA exhibits drain efficiency higher than 50% and output power nearly 10 Watts in concurrent mode. Due to the accurate IM tuning, the efficiency and PUF are improved greatly compared with previously reported concurrent dual-band DPAs, by about 40 percent and 3 times, respectively. To our best knowledge, this is the first reported DPA with IM tuning and the state-of-the-art performance in terms of both efficiency and power utilization factor (PUF).
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; impedance matching; intermodulation; linearisation techniques; microwave power amplifiers; wide band gap semiconductors; GaN; HEMTs; IM tuning; accurate impedance matching; concurrent DPA architecture; dual-band Doherty power amplifier; frequency 1.9 GHz to 2.6 GHz; intermodulation impedance tuning; linearization techniques; matching structure; power 13 W; power utilization factor; Abstracts; Dual band; HEMTs; Harmonic analysis; MODFETs; Tuning; Doherty; GaN; concurrent; dual-band; high efficiency; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/MWSYM.2014.6848482
Filename :
6848482
Link To Document :
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