Title :
Broadband high efficiency GaN discrete and MMIC power amplifiers over 30 – 2700 MHz range
Author :
Bumjin Kim ; Greene, Marjorie ; Osmus, Matt
Author_Institution :
TriQuint, Richardson, TX, USA
Abstract :
This paper presents the design and the measured results of two GaN power amplifiers designed to operate from 30 MHz to 2.7 GHz. One design is a fully integrated non-uniform distributed power amplifier (NDPA) MMIC. NDPA achieves typical small signal gain of 20 dB and produces 10W of output power with 50% or better PAE across the frequency band. The other design is a hybrid discrete packaged amplifier with bridged-T input matching. The packaged amplifier demonstrated 5W of output power and 40-50% PAE across 1 - 2.7 GHz range. Both design techniques can be leveraged in achieving the next generation broadband high efficiency power amplifiers.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; integrated circuit design; wide band gap semiconductors; wideband amplifiers; GaN; MMIC power amplifiers; NDPA MMIC; bridged-T input matching; broadband discrete power amplifiers; frequency 30 MHz to 2.7 GHz; gain 20 dB; hybrid discrete packaged amplifier; nonuniform distributed power amplifier; power 10 W; power 5 W; Field effect transistors; Frequency measurement; Microwave amplifiers; Microwave measurement; Power amplifiers; RNA; Switches; Bridged T; Discrete PA; GaN; MMIC; Non-Uniform Distributed Amplifier; Power Amplifier;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848492