Electrical properties of SBT capacitor with top electrodes

Author

Cho, C.N. ; Kim, J.S. ; Oh, Y.C. ; Lee, D.K. ; Choi, W.S. ; Shin, C.G. ; Kim, C.H. ; Lee, J.U.

Author_Institution

Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea

Volume

3

fYear

2005

Firstpage

596

Abstract

The Sr_0.8Bi_2.2Ta₂O₉ (SBT) thin films are deposited on Pt-coated electrode (Pt/TiO₂/SiO₂/Si) using RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, bi-layered perovskite phase was crystallized at 750 °C and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40μC/cm² and 30 kV/cm respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.81 x 10^-10 A/cm² respectively.

Keywords

X-ray diffraction; annealing; bismuth compounds; current density; dielectric polarisation; electric fields; electrodes; leakage currents; permittivity; platinum; scanning electron microscopy; sputtering; strontium compounds; thin film capacitors; 750 degC; Pt-TiO₂-SiO₂-Si; Pt-coated electrode; RF magnetron sputtering method; SBT capacitor; SEM images; Sr_0.8Bi_2.2Ta₂O₉; XRD pattern; bilayered perovskite; dielectric constant; electric field; electrical properties; leakage current density; oxygen annealing atmosphere; thin films; Annealing; Bismuth; Capacitors; Electrodes; Radio frequency; Semiconductor thin films; Sputtering; Strontium; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on

Print_ISBN

4-88686-063-X

Type

conf

DOI

10.1109/ISEIM.2005.193439

Filename

1496243