Fabrication and dielectric properties of SCT thin film by RF sputtering method

Author

Kim, J.S. ; Cho, C.N. ; Shin, C.G. ; Oh, Y.C. ; Choi, W.S. ; Song, M.J. ; So, B.M. ; Kim, C.H. ; Lee, J.U.

Author_Institution

Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea

Volume

3

fYear

2005

Firstpage

600

Abstract

The (Sr_0.9Ca_0.1)TiO₃(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO₂/Si) using RF magnetron sputtering method. The composition of SCT thin film were closed to stoichiometry (1.081 in A/B ratio). The optimum annealing temperature of SCT thin film was 600[°C]. The dielectric constant depending on the annealing temperature was shown to be the great 146 at 600[°C]. The temperature coefficients of capacitance exhibit very stable values below ±4[%] in the temperature range of -80 ∼ 90[°C]. The temperature properties of the dielectric loss have a stable value within 0.02. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

Keywords

annealing; calcium compounds; capacitance; dielectric losses; dielectric materials; dielectric thin films; permittivity; sputter deposition; sputtered coatings; strontium compounds; 600 degC; Pt-TiN-SiO₂-Si; Pt-coated electrode; RF magnetron sputtering method; SCT thin film deposition; Sr_0.9Ca_0.1TiO₃; dielectric loss; dielectric properties; fabrication properties; optimum annealing temperature; stoichiometry; temperature properties; Annealing; Dielectric constant; Dielectric losses; Dielectric thin films; Fabrication; Radio frequency; Semiconductor thin films; Sputtering; Strontium; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on

Print_ISBN

4-88686-063-X

Type

conf

DOI

10.1109/ISEIM.2005.193440

Filename

1496244