On the influence of polysilicon layer resistance upon the noise performance of microwave BJTs

Author

Caddemi, A. ; Sannino, M. ; Mazzara, S.

Author_Institution

Dipt. di Ingegneria Elettrica, Palermo Univ., Italy

Volume

2

fYear

1997

Firstpage

520

Abstract

Different series of double polysilicon bipolar transistors have been characterized in terms of noise and scattering parameters over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. Extraction of a circuit model has been accomplished for each series based on an improved T-equivalent circuit including noise sources. By such a model, novel analytical expressions for the noise parameters F₀ (minimum noise figure), |Γ ₀| (magnitude of the optimum source reflection coefficient) and r_n (normalized noise resistance) have been derived for this polysilicon self-aligned structure. Following that, a sensitivity analysis has been performed for evaluating the influence of the device model elements upon the noise parameters with specific concern for the polysilicon layer resistance

Keywords

S-parameters; electric resistance; equivalent circuits; microwave bipolar transistors; semiconductor device models; semiconductor device noise; sensitivity analysis; silicon; 2 to 6 GHz; Si; T-equivalent circuit; circuit model; collector current values; device model elements; double polysilicon bipolar transistors; emitter finger number; microwave BJT; minimum noise figure; noise parameters; noise performance; normalized noise resistance; optimum source reflection coefficient; polysilicon layer resistance; scattering parameters; sensitivity analysis; Acoustic reflection; Analytical models; Bipolar transistors; Circuit noise; Fingers; Frequency; Noise figure; Performance evaluation; Scattering parameters; Sensitivity analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International

Conference_Location

Natal

Print_ISBN

0-7803-4165-1

Type

conf

DOI

10.1109/SBMOMO.1997.648805

Filename

648805