DocumentCode :
171431
Title :
A 330 µW, Gm-boosted VCO with −205 dB FoMT and 35 % tuning range using class-b biasing
Author :
Agarwal, Prabhakar ; Baylon, Joe ; Sah, Suman P. ; Majumdar, Deyasini ; Deukhyoun Heo ; Schlegel, Christian
Author_Institution :
Dept. of EECS, Washington State Univ., Pullman, WA, USA
fYear :
2014
fDate :
1-6 June 2014
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we present an ultra-low power VCO with a supply voltage of 0.5 V. The proposed VCO uses class-B biasing with optimum switching amplitude for the tail current sources to improve the phase noise. Using a Gm-boosted structure, the parasitics at the LC-tank have been reduced, thus resulting in a larger tuning range. Using the proposed technique, a phase noise improvement of 2.8 dB at 50 KHz offset and 2.2 dB at 1 MHz offset were achieved. The proposed design was implemented in a 65 nm CMOS process. The VCO achieves a tuning range of > 1 GHz with nominal power consumption of 330 μW, the lowest among VCOs with comparable performance. The proposed VCO achieves an excellent figure-of-merit with a tuning range (FoMT) of -205.4 dBc/Hz at 2.41 GHz.
Keywords :
CMOS analogue integrated circuits; LC circuits; circuit tuning; low-power electronics; phase noise; power consumption; voltage-controlled oscillators; CMOS process; FoMT; LC-tank; class-B biasing; figure-of-merit; frequency 2.41 GHz; optimum switching amplitude; phase noise improvement; power 330 muW; power consumption; size 65 nm; supply voltage; tail current sources; tuning range; ultra-low power VCO; voltage 0.5 V; Abstracts; CMOS integrated circuits; Instruments; MOSFET; Switches; Tuning; Voltage-controlled oscillators; Biomedical; Class-B; Gm-boosting; Voltage-Controlled Oscillator; switched biasing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/MWSYM.2014.6848518
Filename :
6848518
Link To Document :
بازگشت