The electrical properties of glass like insulator prepared by solution process and its application for organic electronic devices

Author

Itoh, Eiji ; Karasawa, Hayato ; Matsukawa, Norihito ; Miyairi, Keiichi

Author_Institution

Dept. of Electr. & Electron. Eng., Shinshu Univ., Nagano, Japan

Volume

3

fYear

2005

Firstpage

646

Abstract

We have fabricated the new type of glass (SiO₂) like thin film insulator called polysilsesquioxane (POSS) and by spin coating or electro-plating technique followed by a heat-treatment between 150 and 450 °C. Our new type of material, ionic-form silsesquioxane enables us to fabricate a SiO₂ film with low temperature heat-treatment of less than 200 °C compared to non-ionic soluble polysilsesquioxane. It was found that the electrical insulating of POSS film strongly depends on the heat-treatment condition, in other words, the network-formation. Finally, the POSS films were then applied to the organic field effect transistors as a gate insulator.

Keywords

electric properties; electroplating; field effect transistors; heat treatment; insulating thin films; organic insulating materials; spin coating; SiO₂; electrical insulating films; electrical properties; electroplating technique; gate insulator; glass like insulator; heat-treatment; ionic-form silsesquioxane; organic electronic devices; organic field effect transistors; polysilsesquioxane; solution process; spin coating; Artificial intelligence; Capacitors; Dielectric materials; Dielectrics and electrical insulation; Electrodes; Glass; Organic electronics; Organic thin film transistors; Thin film devices; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on

Print_ISBN

4-88686-063-X

Type

conf

DOI

10.1109/ISEIM.2005.193452

Filename

1496256