Title :
1.5–2.7 GHz ultra low noise bypass LNA
Author :
Jingshi Yao ; Xiaopeng Sun ; Lin, Bo
Author_Institution :
TriQuint, San Jose, CA, USA
Abstract :
Bypass low-noise amplifier (LNA) can be used in the base station receiver to improve the dynamic range. It is difficult to achieve both ultra low noise at LNA mode and maintain good linearity at bypass mode simultaneously. In this work, we present the best performance bypass LNA with 0.5 dB of noise figure (NF), 20 dB of gain at 1.95 GHz and high OIP3 of 35 dBm for both LNA and bypass mode. Fabricated in 0.25um GaAs E/D pHEMT process, the LNA is based on enhancement mode pHEMT cascode topology and the switches are designed with the depletion mode pHEMT.
Keywords :
III-V semiconductors; UHF amplifiers; field effect transistor switches; gallium arsenide; low noise amplifiers; GaAs; base station receiver; best performance bypass LNA; bypass low-noise amplifier; bypass mode; depletion mode pHEMT; dynamic range; enhancement mode pHEMT cascode topology; frequency 1.5 GHz to 2.7 GHz; gain 20 dB; noise figure 0.5 dB; pHEMT process; size 0.25 mum; switches; ultra low noise; ultra low noise bypass LNA; GSM; Gain; MMICs; Multiaccess communication; Noise; Noise measurement; PHEMTs; Bypass LNA; GaAs E/D-pHEMT; high linearity; switches; ultra low noise;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848521
