1.5–2.7 GHz ultra low noise bypass LNA

Author

Jingshi Yao ; Xiaopeng Sun ; Lin, Bo

Author_Institution

TriQuint, San Jose, CA, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

3

Abstract

Bypass low-noise amplifier (LNA) can be used in the base station receiver to improve the dynamic range. It is difficult to achieve both ultra low noise at LNA mode and maintain good linearity at bypass mode simultaneously. In this work, we present the best performance bypass LNA with 0.5 dB of noise figure (NF), 20 dB of gain at 1.95 GHz and high OIP3 of 35 dBm for both LNA and bypass mode. Fabricated in 0.25um GaAs E/D pHEMT process, the LNA is based on enhancement mode pHEMT cascode topology and the switches are designed with the depletion mode pHEMT.

Keywords

III-V semiconductors; UHF amplifiers; field effect transistor switches; gallium arsenide; low noise amplifiers; GaAs; base station receiver; best performance bypass LNA; bypass low-noise amplifier; bypass mode; depletion mode pHEMT; dynamic range; enhancement mode pHEMT cascode topology; frequency 1.5 GHz to 2.7 GHz; gain 20 dB; noise figure 0.5 dB; pHEMT process; size 0.25 mum; switches; ultra low noise; ultra low noise bypass LNA; GSM; Gain; MMICs; Multiaccess communication; Noise; Noise measurement; PHEMTs; Bypass LNA; GaAs E/D-pHEMT; high linearity; switches; ultra low noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848521

Filename

6848521