Title :
An 81 GHz, 470 mW, 1.1 mm2 InP HBT power amplifier with 4∶1 series power combining using sub-quarter-wavelength baluns
Author :
Hyun-Chul Park ; Daneshgar, Saeid ; Rode, Johann C. ; Griffith, Zach ; Urteaga, M. ; Byung-Sung Kim ; Rodwell, M.
Author_Institution :
ECE Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
We report a two-stage W-band power amplifier (PA) using novel 4.1 series power-combining with sub-quarter-wavelength baluns. The power amplifier, fabricated in a 0.25 μm InP HBT technology, produces 470 mW (26.7 dBm) output power at 81 GHz, 23.4 % peak PAE, and >11.5 GHz 3-dB bandwidth. The compact series power-combining networks permit a small 1.06 mm2 die area and a high 443 mW/mm2 output power per unit die area.
Keywords :
baluns; heterojunction bipolar transistors; millimetre wave power amplifiers; power combiners; HBT technology; InP; compact series power-combining networks; frequency 81 GHz; power 470 mW; size 0.25 mum; subquarter-wavelength baluns; two-stage W-band power amplifier; Abstracts; Heterojunction bipolar transistors; Indium phosphide; Junctions; Thermal stability; Topology; InP; Power amplifier; W-band; series power combining; sub-quarter-wavelength balun;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848523
