Power GaAs MMICs for E-band communications applications

Author

Camargo, Emerson ; Schellenberg, James ; Bui, Lani ; Estella, Nicholas

Author_Institution

QuinStar Technol. Inc., Torrance, CA, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

This paper reports a new family of GaAs MMICs for E-band communications applications. Both single-ended and balanced versions are reported with minimum output power levels of 26 dBm and 28 dBm respectively for both the 71-76 GHz and the 81-86 GHz. bands. This is 3 dB (2 times) higher than the current state-of-the-art. The single-ended version of the low-band (71-76 GHz) MMIC demonstrated an output power density of 0.42 W/mm, which is the highest reported power density for GaAs at this frequency. Using a commercial 6-inch GaAs foundry process, these MMICs were developed to provide a low-cost solution for E-band applications.

Keywords

III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; E-band communications; GaAs; balanced version; commercial GaAs foundry process; frequency 71 GHz to 76 GHz; frequency 81 GHz to 86 GHz; low-band MMIC; power GaAs MMIC; power density; single-ended version; size 6 inch; Bandwidth; Gallium arsenide; MMICs; Reliability; Substrates; E-band; GaAs MMIC; millimeter-wave power; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848537

Filename

6848537