Title :
InP-based DHBT technology for high-speed mixed signal and digital applications
Author :
Driad, R. ; Makon, R.E. ; Hurm, V. ; Benkhelifa, F. ; Lösch, R. ; Rosenzweig, J. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg
Abstract :
We report on an InP DHBT-based technology featuring current gains of ~ 90, breakdown voltages of Gt 4.5 V and cut-off frequency (fT) values of Gt 300 GHz. Using this technology, state-of-the-art mixed signal integrated circuits, including distributed amplifiers (DAs), multiplexers (MUX) / demultiplexers (DEMUX), and clock and data recovery (CDR) ICs suitable for 100+ Gbit/s applications have been demonstrated. The DA-MMICs achieved gains of ~ 21 dB, 3-dB bandwidths of ges 95 GHz (gain-bandwidth-products Gt 1 THz), as well as output voltages of up to 3 V at 100 Gbit/s. A monolithically integrated CDR/1:2 DEMUX IC has also successfully been tested at data rates of up to 107 Gbit/s.
Keywords :
III-V semiconductors; clock and data recovery circuits; demultiplexing equipment; distributed amplifiers; heterojunction bipolar transistors; indium compounds; mixed analogue-digital integrated circuits; multiplexing equipment; DHBT technology; InGaAs-InP; breakdown voltages; clock and data recovery integrated circuits; current gain; cut-off frequency; demultiplexers; distributed amplifiers; multiplexers; signal integrated circuits; Bandwidth; Clocks; Cutoff frequency; DH-HEMTs; Distributed amplifiers; Indium phosphide; Integrated circuit technology; Mixed analog digital integrated circuits; Multiplexing; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012407