Performance improvement of composition-graded AlGaAsSb/InP double heterojunction bipolar transistors

Author

Wu, Bing-Ruey ; Dvorak, Martin W. ; Colbus, Patrick ; Low, T.S. ; Avanzo, Don D´

Author_Institution

TSO Adv. Dev. - High Freq. Technol. Center (HFTC), Agilent Technol., Inc., Santa Rosa, CA

fYear

2009

Firstpage

20

Lastpage

23

Abstract

Compositional graded base Al_xGa_1-xAsSb/InP DHBT is demonstrated to show DC current gain of ~100 with 300 Aring base and base sheet resistance of 1000 Omega/square. The improvement is more than 50% compared to uniform base GaAsSb/InP DHBT with the same base thickness and sheet resistance.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; AlGaAsSb-InP; DC current gain; DHBT; base sheet resistance; composition-graded double heterojunction bipolar transistor; layer structure design; Application specific integrated circuits; DH-HEMTs; Doping; Double heterojunction bipolar transistors; Frequency; High speed integrated circuits; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012409

Filename

5012409