Author :
Monier, C. ; D´Amore, M. ; Scott, D. ; Cavus, A. ; Kaneshiro, E. ; Lin, S. ; Chang, P.C. ; Dang, L. ; Sato, K. ; Radisic, V. ; Truong, M. ; Nam, P. ; Pascua, D. ; Li, D. ; Chan, B. ; Sandhu, R. ; Wang, J. ; Oyama, B. ; Gutierrez, A. ; Oki, A.
Abstract :
We report an advanced InP/InGaAs double heterojunction bipolar transistor technology using aggressive scaling in device layout and epitaxial stack. The device employs a 220 Aring highly doped base and a 1200 Aring collector designed to support current densities in excess of 12 mA/mum2. Transistors with emitter width of 0.25-mum have exhibited simultaneous measured f T and f max frequencies in the 500 GHz range. Frequency divide-by-two digital circuits designed and fabricated with this InP bipolar technology have demonstrated maximum clock frequency of 172 GHz. Manufacturing capabilities for mixed-signal circuits of increased complexity are also reported with improvements in resolution and bandwidth.
Keywords :
III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-InGaAs; aggressive scaling; current density; double heterojunction bipolar transistor technology; epitaxial stack; frequency 172 GHz; size 0.25 mum; Clocks; Current density; Digital circuits; Double heterojunction bipolar transistors; Frequency conversion; Frequency measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Manufacturing;
