DocumentCode :
1714872
Title :
A seamless representation for coupling transistor sizing with nanometric CMOS layout generation
Author :
Youssef, Stéphanie ; Javid, Farakh ; Dupuis, Damien ; Iskander, Ramy ; Louerat, Marie-Minerve
Author_Institution :
Comput. Sci. Lab. (LIP6), Univ. Pierre et Marie Curie (UPMC), Paris, France
fYear :
2011
Firstpage :
341
Lastpage :
344
Abstract :
In this paper, a new method for developing smart parameterized generators for analogue devices is presented. A device is an atomic analogue cell that performs an elementary and standard function such as the differential pair and the current mirror. A device is smart since it can be electrically and physically adapted. In the proposed method, the device sizes and biases are first computed using dedicated sizing operators based on the MOS transistor model and the foundry Design Kit. Once transistor sizes are computed, they are fed to a layout generation tool which offers different layout styles for the same device. The layout is generated with the layout dependent parasitics, including stress effects. These parasitics are then taken into account by the sizing operators. Therefore a loop between sizing and layout generation can be set and executed until the device specifications are met. The method is applied to a differential pair with several layout styles and two distinct technologies.
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit layout; nanoelectronics; stress effects; MOS transistor model; analogue devices; atomic analogue cell; coupling transistor sizing; dedicated sizing operators; device specifications; foundry design kit; layout generation; nanometric CMOS layout generation; smart parameterized generators; stress effects; transistor size; CMOS integrated circuits; Computational modeling; Layout; Semiconductor device modeling; Semiconductor process modeling; Stress; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuit Theory and Design (ECCTD), 2011 20th European Conference on
Conference_Location :
Linkoping
Print_ISBN :
978-1-4577-0617-2
Electronic_ISBN :
978-1-4577-0616-5
Type :
conf
DOI :
10.1109/ECCTD.2011.6043356
Filename :
6043356
Link To Document :
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