Title :
Selective growth and chracterization of InGaAs Quantum Dots on patterned InP substrates utilizaing a diblock copolymer template
Author :
Park, J.H. ; Kirch, J. ; Liu, C.C. ; Rathi, M.K. ; Mawst, L.J. ; Nealey, P.F. ; Kuech, T.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI
Abstract :
To realize the theoretical advantages of Quantum Dots (QDs) as the active region for diode lasers, the selective growth of QDs on patterned substrates were investigated. The substrate nanopatterning and QD formation was realized by diblock copolymers combined with selective MOCVD growth. Using a CF4 reactive ion etch (RIE) and a sacrificial SiNx mask, diblock copolymer nanopattern was transferred to InGaAs QDs on top of prepared InGaAsP / InP substrates and then QDs were grown selective ly by MOCVD. Since growth temperature of patterned QDs is free from QD formation mechanism, unlike self-assembled QDs, two samples were grown at relatively higher temperatures (550 degC and 630 degC) and a significant improvement in photoluminescence (PL) was observed from the sample grown at higher temperature.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; nanopatterning; photoluminescence; semiconductor growth; semiconductor quantum dots; CF4 reactive ion etch; InGaAsP-InP; InP substrates; diblock copolymer nanopattern; diode lasers; growth temperature; photoluminescence; quantum dot formation mechanism; sacrificial SiNx mask; selective MOCVD growth; self-assembled quantum dots; substrate nanopatterning; temperature 550 C; temperature 630 C; Diode lasers; Etching; Indium gallium arsenide; Indium phosphide; MOCVD; Nanopatterning; Quantum dot lasers; Quantum dots; Quantum mechanics; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012413
