Title :
Particle-in-cell modeling of electron oscillation inside a vacuum arc plasma source duct
Author :
Kwok, T.K. ; Zhang, T. ; Chu, P.K. ; Bilek, M.M.M. ; Brown, I.G.
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Hong Kong
Abstract :
Summary form only given. Vacuum arc or cathodic arc metal plasma sources can deposit high quality thin metal films and metallurgical coatings. A metal plasma consisting of positive metal ions and electrons is created when an arc discharge is triggered between two metal electrodes in vacuum. Metal plasma immersion ion implantation can improve the wear and corrosion resistance of the treated surface. A three-dimensional particle-in-cell (PIC) numerical model has been developed to simulate the motion of electrons inside the duct of a vacuum arc metal plasma source. It is found that electrons will travel back and forth inside the duct tube. This new phenomenon can be explained by the combined effects of the electric and magnetic fields. The electron oscillation will increase the charged state of the positive ions and the ions will consequently gain more energy. Due to the influence of electron oscillation, the plasma throughput of the duct will be different from that of a duct under the influence of only the magnetic field. This novel finding should be taken into account when designing metal arc sources and optimizing their performance.
Keywords :
plasma materials processing; plasma oscillations; plasma production; plasma simulation; vacuum arcs; arc discharge triggering; cathodic arc metal plasma sources; corrosion resistance; electron motion simulations; electron oscillation; high quality thin metal film deposition; metal electrodes; metal plasma; metal plasma immersion ion implantation; metallurgical coatings; particle-in-cell modeling; positive metal ions; three-dimensional particle-in-cell numerical model simulation; treated surface; vacuum arc plasma source duct; wear resistance; Arc discharges; Coatings; Ducts; Electrodes; Electrons; Plasma immersion ion implantation; Plasma simulation; Plasma sources; Surface resistance; Vacuum arcs;
Conference_Titel :
Plasma Science, 1999. ICOPS '99. IEEE Conference Record - Abstracts. 1999 IEEE International Conference on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5224-6
DOI :
10.1109/PLASMA.1999.829608